DMT3006LFVQ-13

$0.25

Description：MOSFET N-CH 30V 60A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:4edaa92e1411 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 60A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1155 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8 (Type UX)
Package / Case：8-PowerVDFN

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DMT3006LFVQ-13

Overview

The DMT3006LFVQ-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 60A at TC = +25°C. The device offers a low on-state resistance (RDS(ON)) of 7mΩ max at VGS = 10V and 11mΩ max at VGS = 4.5V. Packaged in a PowerDI3333-8 (Type UX) case, it supports an operating temperature range from -55°C to +150°C.

Feature Summary

Low RDS(ON) minimizes on-state losses for high efficiency power management
100% unclamped inductive switching tested in production for robustness
Small form factor thermally efficient package enables higher density end products
Occupies just 33% of the board area occupied by SO-8

Applications

Power Management Functions
Analog Switch

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000 units per tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets AEC-Q101 standards if automotive reliability requirements are necessary for the intended application environment.

Selection Notes

Select this component when a compact footprint is required alongside low conduction losses. The PowerDI3333-8 package provides significant board area reduction compared to traditional SO-8 packages while maintaining thermal performance suitable for dense circuit designs.

Part Context

This part belongs to the DMT3006 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to balance minimal on-state resistance with superior switching performance, targeting applications demanding high efficiency within constrained physical spaces.

Replacement Considerations

Consult official substitution guides or datasheets for equivalent components. Verify pinout compatibility, electrical ratings, and package dimensions before replacing the original part in existing designs.