DMT3006LFVQ-7

$0.88

Description：MOSFET N-CH 30V 60A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f8236693e93c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 60A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1155 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8 (Type UX)
Package / Case：8-PowerVDFN

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DMT3006LFVQ-7

Overview

The DMT3006LFVQ-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and operates within a junction temperature range of -55°C to +150°C. The device utilizes the PowerDI3333-8 (Type UX) surface-mount package. Key electrical parameters include a maximum continuous drain current of 60A at 25°C case temperature, a gate-source voltage limit of ±20V, and a static drain-source on-resistance of 7mΩ at VGS=10V. Total gate charge is specified at 16.7nC.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Features a small form factor thermally efficient package that occupies only 33% of the board area compared to SO-8 packages.
Qualified to AEC-Q101 standards for high reliability and capable of PPAP submission for automotive applications.

Applications

Power Management Functions
Analog Switch

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm RoHS compliance status and halogen-free classification requirements with the manufacturer's quality definitions before procurement. Ensure the component meets all applicable automotive qualification standards if intended for such environments.

Selection Notes

Select this component when low on-state resistance and compact footprint are critical design constraints. Evaluate thermal resistance characteristics relative to the target PCB copper layout and heat dissipation strategy. Consider the gate threshold voltage and total gate charge requirements for the driving circuitry to ensure optimal switching performance.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered for applications requiring high current handling in minimal space. The PowerDI3333-8 package provides a robust solution for modern electronics where board density and thermal efficiency are paramount.

Replacement Considerations

Consult official datasheets for alternative part numbers within the same product family or from other manufacturers. Verify pinout compatibility, voltage ratings, and thermal characteristics before substitution.