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Product Detailed Parameters
- Description：MOSFET N-CH 30V 12A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：886 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMT3008LFDF-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 (Type F) surface-mount package with a 0.6mm profile and a PCB footprint of 4mm². The device has a drain-source breakdown voltage (BVDSS) of 30V and a maximum continuous drain current (ID) of 12.0A at TA = +25°C with VGS = 10V. The static drain-source on-resistance (RDS(ON)) is 10mΩ max at VGS = 10V and 16mΩ max at VGS = 4.5V. Total gate charge (Qg) is 14nC at VGS = 10V. Operating temperature range is -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Features a low profile construction with a 0.6mm case height, suitable for space-constrained designs.
- Totally lead-free and fully RoHS compliant, also halogen and antimony free.
- Low gate threshold voltage facilitates easy drive compatibility.
Applications
- General purpose interfacing switch
- Power management functions
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm reel size and quantity per reel. Confirm that the component meets required environmental standards such as RoHS compliance and moisture sensitivity levels. Ensure the application environment stays within the specified operating temperature range and thermal dissipation limits defined in the datasheet.
Selection Notes
Select this component when a compact N-channel MOSFET with low RDS(ON) is required for 30V applications. Consider the U-DFN2020-6 package constraints regarding pad layout and copper area for optimal thermal performance. Evaluate gate drive requirements based on the specified threshold voltage and total gate charge values.
Part Context
This part belongs to the DMT series of MOSFETs from Diodes Incorporated, designed for general-purpose switching and power management. It utilizes silicon technology and is housed in a molded plastic green molding compound case with UL flammability classification rating 94V-0.
Replacement Considerations
Consult official Diodes Incorporated documentation or authorized distributors for confirmed substitute part numbers. Do not assume cross-compatibility with other manufacturers' parts without verifying electrical parameters and pin configurations.
FAQ
What is the maximum pulsed drain current?
The maximum pulsed drain current (IDM) is 70A, based on a 10µs pulse with a 1% duty cycle.
Is the device suitable for automotive applications?
For automotive applications requiring specific change control, AEC-Q100/101/200 qualification, PPAP capability, or IATF 16949 manufacturing, contact Diodes Incorporated directly.
