DMT3009LDT-7

FET, MOSFET Arrays Overview

The DMT3009LDT-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN3030-8 (Type K) case with a drain-source voltage (BVDSS) of 30V. The device provides a maximum continuous drain current (ID) of 30A at TC = +25°C and 14A at TA = +25°C. Static drain-source on-resistance (RDS(ON)) is rated at 11.1mΩ max at VGS = 10V, 13.8mΩ max at VGS = 4.5V, and 22.0mΩ max at VGS = 3.8V. Total gate charge (Qg) is 20nC max at VGS = 10V. Thermal resistance junction-to-ambient is 107°C/W steady state.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a single compact package for space-constrained designs.
• Optimized low on-state resistance to minimize conduction losses in power management circuits.
• Superior switching performance characteristics suitable for high-efficiency applications.
• Totally lead-free construction fully compliant with RoHS directives.

FET, MOSFET Arrays Applications

• General purpose interfacing switch
• Power management functions

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging format. Confirm that the V-DFN3030-8 (Type K) mechanical dimensions align with the target PCB footprint requirements. Ensure compliance with moisture sensitivity level 1 per J-STD-020 standards during storage and handling procedures.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required within a 3mm x 3mm footprint. Evaluate the 30V breakdown voltage against peak circuit transients. Consider the 11.1mΩ RDS(ON) specification for thermal management calculations under continuous load conditions at 25°C case temperature.

FET, MOSFET Arrays Part Context

This part belongs to the DMT series of silicon N-channel MOSFETs from Diodes Incorporated. It utilizes advanced cell architecture to achieve low RDS(ON) while maintaining fast switching speeds. The device is designed for general-purpose power switching and interface applications requiring high efficiency and compact form factors.

FET, MOSFET Arrays Replacement Considerations

DMT3009LDV-7

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current rating?

The maximum continuous drain current is 30A at a case temperature of +25°C and 14A at an ambient temperature of +25°C.

Does the device support avalanche energy ratings?

Yes, the datasheet specifies an avalanche energy (EAS) rating of 18.6 mJ with an inductance of 0.1mH starting at +25°C.

What is the operating temperature range?

The operating and storage temperature range extends from -55°C to +150°C.