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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：17.5A (Tc)
- Rds On (Max) @ Id, Vgs：11mOhm @ 14.4A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：823pF @ 15V
- Power - Max：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type UXC)
- Grade：-
- Qualification：-
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Overview
The DMT3009LDV-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type UXC) surface-mount package. It features a drain-source voltage rating of 30V and a continuous drain current of 17.5A at +25°C case temperature. The device achieves a maximum on-resistance of 11mΩ at VGS=10V and 17.5mΩ at VGS=4.5V. Total gate charge is 12nC at VGS=10V. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- Dual configuration integrating two independent N-channel MOSFETs within a single compact footprint.
- Optimized for high-efficiency power management through minimized on-state resistance and superior switching performance.
- Compliant with RoHS directives and manufactured as a halogen-free and antimony-free green device.
Applications
- Power-management functions
- Analog switches
Procurement Notes
Verify the ordering suffix '-13' corresponds to the 3000-unit tape and reel carrier format specified in the datasheet. Confirm that the component meets specific automotive change control requirements if intended for AEC-Q100/101/104/200 qualified applications by contacting the manufacturer directly.
Selection Notes
Select this component for designs requiring low on-resistance and fast switching in a small surface-mount form factor. Ensure thermal management accounts for the 133 °C/W junction-to-ambient thermal resistance when operating without an optimized copper pad layout. Verify gate drive voltages align with the specified thresholds for optimal conduction characteristics.
Part Context
This part belongs to the DMT3009LDV series of dual N-channel enhancement mode MOSFETs. It utilizes the PowerDI3333-8 package type, which provides a lead-free terminal finish of matte tin annealed over a copper leadframe. The device is designed to balance low static losses with dynamic switching efficiency.
Replacement Considerations
DMT3009LDV-7 serves as a parameter-equivalent alternative within the same product family, differing only in the packing quantity carrier.
FAQ
What is the maximum body diode forward current?
The maximum steady-state body diode forward current (IS) is rated at 0.8A.
Is the device suitable for unclamped inductive switching?
Yes, the datasheet specifies Unclamped Inductive Switching (UIS) capability with an avalanche energy rating of 20 mJ using a 0.1mH inductor.
How does the on-resistance vary with temperature?
The on-resistance increases as the junction temperature rises, as illustrated in the typical on-resistance versus junction temperature graphs provided in the electrical characteristics section.
