DMT3009LDV-7

Overview

The DMT3009LDV-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type UXC) surface-mount package. It features a drain-source voltage rating of 30V and a continuous drain current capacity of 17.5A at 25°C case temperature. The device achieves a maximum on-resistance of 11mΩ at VGS=10V and 17.5mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage of up to 3V, total gate charge of 12nC at 10V, and input capacitance of 823pF. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Dual configuration integrating two independent N-channel MOSFETs into a single compact footprint for space-constrained designs.
• Optimized low on-state resistance to minimize conduction losses while maintaining superior switching performance.
• Low input capacitance and fast switching speed characteristics suitable for high-efficiency power management applications.

Applications

• Power-management functions
• Analog switches

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 2000-unit tape and reel carrier format required for your assembly line. Confirm that the PowerDI3333-8 (Type UXC) package dimensions align with your PCB pad layout specifications. Ensure compliance with RoHS 3 and halogen-free requirements if mandated by your project standards before finalizing procurement.

Selection Notes

Select this component when a dual N-channel topology is required within a minimal surface area constraint. Evaluate thermal dissipation capabilities against your system's ambient temperature and copper pad layout, as power ratings are package-limited. Consider the gate threshold voltage range and drive voltage levels to ensure optimal RDS(ON) performance during operation.

Part Context

This part belongs to Diodes Incorporated's generation of MOSFETs designed to balance low on-resistance with efficient switching. It utilizes the PowerDI® 3333-8 package, which provides a green, lead-free solution with UL 94V-0 flammability rating. The device is intended for modern electronic systems requiring high-density power distribution and signal switching capabilities.

Replacement Considerations

DMT3009LDV-13 serves as a parameter-equivalent alternative from the same manufacturer, differing primarily in the packing quantity per carrier reel.

FAQ

What is the maximum pulsed drain current capability of the DMT3009LDV-7?

The device supports a pulsed drain current of 70A, defined by a 10µs pulse duration with a 1% duty cycle.

How does the on-resistance vary with gate-source voltage?

RDS(ON) increases as the gate-source voltage decreases; it is specified at 11mΩ max at 10V, 17.5mΩ max at 4.5V, and 25mΩ max at 3.8V.

Is the device suitable for automotive applications?

Standard production units are not automatically qualified for automotive use. For AEC-Q100/101/104/200 qualification and IATF 16949 manufacturing, direct contact with Diodes Incorporated or a local representative is required.