DMT3009LFVW-13

$0.20

Description：MOSFET N-CH 30V 12A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:5658d39b5e8d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 12A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：3.8V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：823 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMT3009LFVW-13

Overview

The DMT3009LFVW-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8 packaging to minimize on-state resistance while maintaining superior switching performance. Key electrical parameters include a drain-source breakdown voltage of 30V, a maximum continuous drain current of 5A at +25°C ambient temperature, and a static drain-source on-resistance of 11mΩ at VGS=10V. The device features a total gate charge of 12nC and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance for high efficiency power management applications
Small form factor thermally efficient package enables higher density end products
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
Wettable flank for improved optical inspection

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 3,000 units as documented in the manufacturer's ordering information. Confirm that the PowerDI3333-8 case style matches the intended PCB footprint requirements. Ensure compliance with RoHS 3 and halogen-free specifications if mandated by the target application standards.

Selection Notes

Select this component when space constraints require a footprint significantly smaller than standard SO-8 packages. The low RDS(ON) characteristics make it suitable for applications prioritizing conduction loss reduction. Verify that the 30V drain-source voltage rating provides adequate margin for the specific circuit operating conditions.

Part Context

This part belongs to the DMT3009LFVW series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is engineered for high-density surface mount applications requiring robust thermal performance and low on-resistance within a compact PowerDI3333-8 package.