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Product Detailed Parameters
- Description：MOSFET N-CH 30V 12A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：3.8V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 14.4A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：823 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMT3009LFVW-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30 V and utilizes the PowerDI3333-8 surface-mount package. The device provides a static drain-source on-resistance (RDS(ON)) of 11 mΩ at VGS = 10 V and 14.4 A, or 13 mΩ at VGS = 4.5 V and 7 A. Continuous drain current reaches 50 A at TC = +25°C. Total gate charge is 12 nC at VGS = 10 V. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Small form factor thermally efficient package enables higher density end products and occupies just 33% of the board area occupied by SO-8 packages.
- Features wettable flanks for improved optical inspection during manufacturing.
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 2,000 units per tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component meets RoHS 3 compliance standards and is halogen and antimony free. Ensure the application environment does not require automotive-specific change control qualifications, which are covered under a separate datasheet.
Selection Notes
Select this component when a low-profile, thermally efficient N-channel MOSFET with a 30 V rating is required. The PowerDI3333-8 package offers significant board space savings compared to traditional SO-8 footprints. Verify that the required continuous drain current and thermal dissipation capabilities align with the system's operating conditions and ambient temperature constraints.
Part Context
This part belongs to the DMT3009LFVW series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series is engineered for high-density power management solutions where minimizing footprint and conduction losses are critical design parameters.
Replacement Considerations
DMT3009LFVW-13
FAQ
What is the maximum continuous drain current capability?
The maximum continuous drain current is 50 A at a case temperature of +25°C and 37 A at a case temperature of +70°C.
Does this component support automotive applications?
Standard versions are not qualified for automotive use. For automotive applications requiring AEC-Q100/101/200 qualification and IATF 16949 manufacturing, an automotive-compliant part is available under a separate datasheet (DMT3009LFVWQ).
