DMT3009LFVWQ-13

$0.25

Description：MOSFET N-CH 30V 12A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:1d0c16f3beb3 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 12A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：3.8V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：823 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.3W (Ta), 35.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMT3009LFVWQ-13

Overview

The DMT3009LFVWQ-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 (SWP) Type UX package and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a drain-source breakdown voltage (BVDSS) of 30V, a maximum continuous drain current (ID) of 50A at TC=+25°C, and a static drain-source on-resistance (RDS(ON)) of 11mΩ at VGS=10V. The device features a gate threshold voltage (VGS(TH)) of 1V to 3V, total gate charge (Qg) of 12nC at VGS=10V, and a thermal resistance junction-to-case (RθJC) of 3.5°C/W.

Feature Summary

Qualified to AEC-Q101 standards for high reliability with PPAP capability
Features wettable flanks to improve optical inspection quality
Completely lead-free, halogen-free, and antimony-free green device
Includes 100% unclamped inductive switching testing during production

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify that the specific ordering suffix matches the required tape and reel quantity. Confirm that the component meets automotive qualification requirements if intended for vehicle applications. Ensure the design accounts for the specified thermal resistance values under actual operating conditions. Check for compliance with RoHS directives and confirm the absence of intentionally added lead or restricted substances.

Selection Notes

Select this component when a compact surface-mount solution is required for low-voltage power switching. The small form factor allows for higher density designs compared to traditional packages. Consider the thermal performance and on-resistance characteristics for efficiency optimization. Verify that the gate drive voltage aligns with the specified thresholds for optimal conduction.

Part Context

This part belongs to the DMT3009LFVWQ series from Diodes Incorporated. It is designed as an N-channel enhancement mode MOSFET. The product summary indicates it minimizes on-state resistance while maintaining superior switching performance. It is specifically engineered for high-efficiency power management applications requiring small board area.