DMT3009LFVWQ-7

$0.75

Description：MOSFET N-CH 30V 12A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:01bf6c2b37bb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 12A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：3.8V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：823 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.3W (Ta), 35.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMT3009LFVWQ-7

Overview

The DMT3009LFVWQ-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30 V and a gate-source voltage (VGSS) rating of ±20 V. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 11 mΩ at VGS = 10 V and 13 mΩ at VGS = 4.5 V. Continuous drain current (ID) reaches 50 A at TC = +25°C and 12 A at TA = +25°C. Total power dissipation is rated at 2.3 W at TA = +25°C and 35.7 W at TC = +25°C. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Qualified to AEC-Q101 standards for high reliability in automotive applications
PowerDI3333-8 package with wettable flanks for improved optical inspection
Totally lead-free, fully RoHS compliant, and halogen/antimony free
PPAP capable for automotive supply chain requirements

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets all applicable environmental directives and automotive qualification standards relevant to the target application before finalizing procurement specifications.

Selection Notes

Select this component when a compact surface-mount solution with low on-state resistance is required for 30 V systems. Ensure thermal design accounts for the specified power dissipation limits under both ambient and case temperature conditions to maintain safe operating area compliance.

Part Context

This part belongs to the DMT3009LFVWQ series of N-channel MOSFETs designed for high-efficiency power management. It utilizes the PowerDI3333-8 (SWP) package, which occupies significantly less board area than traditional SO-8 packages while providing enhanced thermal efficiency through its exposed drain pad.