DMT3009UDT-7

Overview

The DMT3009UDT-7 is a dual N-channel enhancement mode MOSFET in a V-DFN3030-8 package. It features a drain-source voltage of 30V and an on-resistance of 11.1mΩ at VGS=10V, or 15.0mΩ at VGS=4.5V. The continuous drain current reaches 30A at TC=+25°C. Total gate charge is 14.6nC at VGS=10V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Dual N-channel configuration with integrated gate protection diodes for each channel.
• Ultra-low gate threshold voltage design for efficient switching performance.
• Totally lead-free and fully RoHS compliant construction.
• Halogen and antimony free green device packaging.

Applications

• General purpose interfacing switch
• Power management functions

Procurement Notes

Verify the specific ordering suffix matches the required tape width and pitch. Confirm that the V-DFN3030-8 (Type KS) case material meets your board layout requirements. Ensure the manufacturer's date code aligns with your assembly schedule. Check for any automotive qualification notes if AEC standards are necessary for your application.

Selection Notes

Select this component when a compact dual MOSFET solution is required for low-voltage power paths. The V-DFN3030-8 package offers a balance between thermal dissipation and footprint size. Consider the 11.1mΩ on-resistance for high-efficiency designs operating at standard logic gate voltages.

Part Context

This part belongs to Diodes Incorporated's advanced MOSFET family designed for minimizing on-state resistance while maintaining fast switching speeds. The DMT3009UDT specifically targets applications requiring dual channels within a single small outline package to save board space.

Replacement Considerations

DMT3009UDT-13

FAQ

Does the DMT3009UDT include internal protection?

Yes, the device includes integrated gate protection diodes for both Channel 1 and Channel 2.

What is the maximum pulsed drain current?

The maximum pulsed drain current is 80A with a 100µs pulse duration and 1% duty cycle.