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Product Detailed Parameters
- Description：MOSFET N-CH 30V 10.6A/30A PWRDI
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：10.6A (Ta), 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.4 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：894 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta), 2.6W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMT3009UFVW-13 is a 30V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features an on-resistance of 11mΩ at VGS=10V and 13mΩ at VGS=4.5V, with continuous drain currents of 30A at TC=25°C and 25A at TC=70°C. The device has a gate-source voltage rating of ±12V, operates from -55°C to +150°C, and includes ESD protection and wettable flank terminals.
Feature Summary
- Ultra-low gate threshold voltage for efficient drive requirements
- Wettable flank design enables improved optical inspection reliability
- Integrated ESD protected gate structure
- 100% unclamped inductive switching (UIS) tested for robustness
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the 'SWP' case style matches the required board layout specifications. Ensure compliance with RoHS and halogen-free standards if applicable to the target assembly process.
Selection Notes
Select this component when low on-state resistance is critical for high-efficiency power management applications. The wide operating temperature range supports demanding thermal environments. Verify that the 30V breakdown voltage aligns with the system's maximum supply rails and transient conditions.
Part Context
This part belongs to Diodes Incorporated's PowerDI series, designed for surface-mount applications requiring compact footprints. The PowerDI3333-8 package provides enhanced thermal performance compared to standard small signal packages while maintaining a minimal board area footprint suitable for dense PCB layouts.
Replacement Considerations
Consult official substitution lists for verified alternatives. Cross-reference pinouts and thermal characteristics carefully when considering similar N-channel MOSFETs in comparable packages.
