DMT3009UFVW-7

$0.16

Description：MOSFET N-CH 30V 10.6A/30A PWRDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:8164cbacbeab Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 10.6A/30A PWRDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10.6A (Ta), 30A
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.4 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：894 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta), 2.6W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMT3009UFVW-7

Overview

The DMT3009UFVW-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI3333-8 package with wettable flank technology. The device supports a drain-source voltage of 30V and offers low on-resistance values of 11mΩ at VGS=10V and 13mΩ at VGS=4.5V. Continuous drain current reaches 30A at TC=25°C, with a maximum gate-source voltage of ±12V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Ultra-low gate threshold voltage for efficient drive requirements
Low on-resistance combined with fast switching speed
Wettable flank design enables improved optical inspection
ESD protected gate structure

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required quantity: -7 indicates 2,000 units per tape and reel, while -13 indicates 3,000 units. Confirm compliance with RoHS 3 and REACH directives. Ensure the application environment does not exceed the specified thermal resistance limits or junction temperature ratings during operation.

Selection Notes

Select this component when high efficiency power management requires minimizing on-state resistance without sacrificing switching performance. The low input capacitance and fast switching characteristics make it suitable for applications demanding rapid transitions. Verify that the system's gate drive voltage aligns with the specified thresholds for optimal conduction.

Part Context

This part belongs to the DMT3009 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the PowerDI3333-8 case style, which provides a compact surface-mount solution. The series is designed to balance low static losses with dynamic performance for modern electronic systems.