DMT3020LDV-13

$0.16

Description：MOSFET 2N-CH 30V 32A PWRDI3333
Series：-

SKU:592f4e4c8b4f Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 32A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：32A (Tc)
Rds On (Max) @ Id, Vgs：20mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：393pF @ 15V
Power - Max：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PowerDI3333-8 (Type UXC)
Grade：-
Qualification：-

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DMT3020LDV-13

Overview

The DMT3020LDV-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 (Type UXC) surface-mount package. The device features a drain-source voltage rating of 30V and a continuous drain current of 32A at +25°C case temperature. Maximum on-resistance is specified as 20mΩ at VGS=10V and 32mΩ at VGS=4.5V. Total gate charge is 7nC at VGS=10V. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Dual N-channel configuration for space-efficient circuit designs
Low on-resistance optimized for high efficiency power management
Fast switching speed with low input capacitance
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

Power Management Functions
Analog Switch

Procurement Notes

Verify the ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging format. Confirm that the specific revision of the datasheet matches the production lot requirements. Ensure the application environment remains within the specified thermal resistance limits for the PowerDI3333-8 package.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage applications. The PowerDI3333-8 package provides a balance between thermal performance and board space savings. Verify that the 30V breakdown voltage meets the system's maximum operating conditions.

Part Context

This part belongs to the DMT3020 series of dual MOSFETs designed for high-efficiency power management. It shares the same electrical characteristics as the DMT3020LDV-7 variant but differs in standard factory packaging quantity. Both utilize the same UXC mechanical outline.