DMT3020LFCL-7

$0.14

Description：MOSFET N-CH 30V 7.6A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:3b23eb52b6aa Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 7.6A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：7.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：393 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.7W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：U-DFN1616-6
Package / Case：6-UFDFN Exposed Pad

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DMT3020LFCL-7

Overview

The DMT3020LFCL-7 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN1616-6 (Type K) package with a typical off-board profile of 0.6mm. The device provides a drain-source breakdown voltage (BVDSS) of 30V and continuous drain current (ID) ratings of 7.6A at +25°C and 6.0A at +70°C. Static drain-source on-resistance (RDS(ON)) is specified as 20mΩ max at VGS=10V and 32mΩ max at VGS=4.5V. Operating temperature range spans from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Totally lead-free, fully RoHS compliant, and halogen and antimony free "Green" device construction.
Utilizes a U-DFN1616-6 case material made of molded plastic with UL flammability classification rating 94V-0.

Applications

Power Management Functions
Loadswitch

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000 units per tape and reel packaging configuration. Confirm that the component meets the required environmental standards, specifically RoHS compliance and Halogen/Antimony-free definitions. Ensure the U-DFN1616-6 footprint matches the PCB layout guidelines provided in the datasheet to maintain thermal and mechanical integrity during assembly.

Selection Notes

Select this component when a low-profile surface-mount solution is required for thin applications due to its 0.6mm height. Evaluate the RDS(ON) specifications against the intended gate drive voltage (4.5V or 10V) to ensure conduction losses remain within acceptable limits. Consider the thermal resistance characteristics and maximum operating junction temperature when designing heat dissipation strategies for the target circuit environment.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is housed in a U-DFN1616-6 package. The product line focuses on providing low on-resistance and fast switching capabilities suitable for modern power management systems requiring compact form factors.

Replacement Considerations

Consult official manufacturer documentation for confirmed substitute part numbers. Verify pinout compatibility, electrical parameters, and package dimensions before substitution.