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Product Detailed Parameters
- Description：MOSFET N-CH 30V 8.4A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：8.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：17mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：70 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：393 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：700mW (Ta), 1.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMT3020LFDF-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 30 V and a maximum on-resistance (R_DS(ON)) of 17 mΩ at V_GS = 10 V, supporting a continuous drain current (I_D) of 8.4 A at +25°C. The device utilizes a U-DFN2020-6 package with a 0.6 mm profile. It operates within a temperature range of -55°C to +150°C and includes a total gate charge (Q_g) of 7 nC.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Features a low profile construction with a 0.6 mm height and a compact PCB footprint of 4 mm².
- Totally lead-free and fully RoHS compliant, also halogen and antimony free.
- Equipped with a low gate threshold voltage to facilitate efficient drive requirements.
Applications
- General purpose interfacing switch
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets all applicable environmental compliance standards required for the intended deployment environment before finalizing procurement orders.
Selection Notes
Select this component when a 30 V N-channel MOSFET with low R_DS(ON) is required for space-constrained designs. The U-DFN2020-6 package is suitable for applications demanding a minimal board footprint and low profile. Ensure the thermal design accommodates the specified junction-to-ambient thermal resistance values under expected operating conditions.
Part Context
This part belongs to the DMT3020LFDF series from Diodes Incorporated, representing a generation of MOSFETs optimized for low on-resistance and high switching efficiency. The series targets general-purpose switching and power management tasks where size and electrical performance are critical constraints.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, current capabilities, package dimensions, and electrical characteristics to ensure functional compatibility without circuit modification.
FAQ
What is the maximum continuous drain current for the DMT3020LFDF-13?
The maximum continuous drain current is 8.4 A at an ambient temperature of +25°C and 6.7 A at +70°C when V_GS is 10.0 V.
Does the DMT3020LFDF-13 support avalanche energy ratings?
Yes, the datasheet specifies an avalanche current (I_AS) of 11.4 A and avalanche energy (E_AS) of 6.5 mJ based on low frequency and duty cycles to keep T_J at +25°C.
