DMT3020LFDFQ-13

$0.09

Description：MOSFET BVDSS: 25V~30V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:b893e9fd0d4f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：8.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：17mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：393 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：700mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMT3020LFDFQ-13

Overview

The DMT3020LFDFQ-13 is a 30V N-channel enhancement mode MOSFET in a U-DFN2020-6 package. It features a maximum drain-source voltage of 30V and a continuous drain current of 8.4A at 25°C (VGS=10V). The on-resistance is 17mΩ max at VGS=10V and 28mΩ max at VGS=4.5V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Qualified for automotive applications with AEC-Q101 certification and PPAP capability.
Features a low profile 0.6mm case height suitable for space-constrained designs.
Utilizes a compact PCB footprint of 4mm².
Manufactured in IATF 16949 certified facilities.

Applications

Power management functions
General purpose interfacing switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required automotive quality standards, including AEC-Q101 qualification and PPAP documentation, as these are critical for the intended application environment.

Selection Notes

Select this component when a low-profile N-channel MOSFET is required for automotive or high-reliability environments. Ensure the design accommodates the U-DFN2020-6 package dimensions and utilizes adequate copper area on the PCB to manage thermal resistance effectively under steady-state conditions.

Part Context

This device belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It is designed to meet stringent industry requirements for reliability and change control. The product is manufactured in facilities certified to IATF 16949 standards.