DMT3020LFDFWQ-13

$0.09

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:ee834c8c177b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：8.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：17mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：393 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：700mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：U-DFN2020-6 (SWP) (Type UXG)
Package / Case：6-UDFN Exposed Pad

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DMT3020LFDFWQ-13

Overview

The DMT3020LFDFWQ-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage of 30V and a continuous drain current of 8.4A at +25°C. The device offers a typical on-resistance of 17mΩ at VGS=10V and 28mΩ at VGS=4.5V. Packaged in a U-DFN2020-6/SWP (Type UXG) footprint, it supports a junction temperature range from -55°C to +150°C.

Feature Summary

Qualified for automotive applications with AEC-Q101 certification and PPAP capability.
Features wettable flank terminals to facilitate improved optical inspection during assembly.
Constructed using a totally lead-free and fully RoHS compliant process.
Designed as a halogen and antimony free green device.

Applications

Power-management functions
General-purpose interfacing switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel carrier configuration. Confirm that the U-DFN2020-6/SWP package type matches the required PCB footprint dimensions. Ensure the component meets the necessary automotive quality standards if deployed in regulated environments.

Selection Notes

Select this component when a low-profile 0.6mm height solution is required for space-constrained designs. Consider the 17mΩ on-resistance for efficiency requirements at standard gate drive voltages. Evaluate the thermal resistance characteristics against the expected power dissipation levels in the target application environment.

Part Context

This part belongs to the DMT series of N-channel MOSFETs from Diodes Incorporated. It utilizes the U-DFN2020-6/SWP package, which provides a compact 4mm² PCB footprint. The device is designed to meet stringent automotive reliability standards while maintaining high electrical performance in small form factors.