DMT3020UFDB-7

Overview

The DMT3020UFDB-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 package with a 0.6mm profile. The device supports a drain-source voltage of 30V and offers low on-resistance, rated at 21mΩ maximum at VGS=10V for 6.5A continuous current, or 30mΩ at VGS=4.5V for 5.4A. It includes integrated ESD protection diodes on both gates.

Feature Summary

• Dual N-channel configuration with integrated gate protection diodes
• Ultra-low profile 0.6mm package suitable for space-constrained designs
• Optimized for high-efficiency power management applications
• Fully RoHS compliant and halogen-free construction

Applications

• General-purpose interfacing switches
• Power-management functions

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity. The -7 suffix indicates a 3,000-unit tape and reel carrier, while the -13 suffix denotes a 10,000-unit carrier. Confirm that the required packing quantity aligns with production needs before finalizing procurement orders.

Selection Notes

Select this component when a compact dual MOSFET solution is required for low-voltage switching. The U-DFN2020-6 package provides a small footprint with a 0.6mm height. Ensure the application operates within the 30V drain-source voltage limit and accounts for the thermal resistance characteristics in the design phase.

Part Context

This part belongs to the DMx3020 series from Diodes Incorporated, designed as a next-generation MOSFET family. It shares the 30V BVDSS rating with other members but distinguishes itself through the dual-channel architecture and the specific U-DFN2020-6 Type B mechanical package dimensions.

Replacement Considerations

Direct replacements include the DMT3020UFDB-13, which shares identical electrical specifications but utilizes a 10,000-unit tape and reel carrier instead of the 3,000-unit standard.