DMT3022UEV-13

$0.21

Description：MOSFET 2N-CH 30V 17A PWRDI3333
Series：-

SKU:72b5912c089f Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 17A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：17A (Tc)
Rds On (Max) @ Id, Vgs：22mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：903pF @ 15V
Power - Max：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PowerDI3333-8 (Type UXD)
Grade：-
Qualification：-

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DMT3022UEV-13

Overview

The DMT3022UEV-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI3333-8 (Type UXD) surface-mount package. The device provides a drain-source breakdown voltage of 30 V and continuous drain currents of 17 A at 10 V gate drive or 14 A at 4.5 V gate drive. Static drain-source on-resistance is specified as 22 mΩ at 10 V and 28 mΩ at 4.5 V. Operating temperature ranges from -55 °C to +150 °C.

Feature Summary

Dual N-channel configuration with integrated gate protection diodes for each channel
Ultra-low gate threshold voltage enabling efficient switching at low drive voltages
Low input capacitance combined with fast switching speed characteristics
Totally lead-free, fully RoHS compliant, and halogen/antimony free construction

Applications

General purpose interfacing switch applications
Power management functions in electronic circuits
High-efficiency power management systems requiring low on-state resistance

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets required environmental standards such as RoHS compliance and moisture sensitivity levels before integration into production designs.

Selection Notes

Select this component when a compact dual N-channel solution is required for space-constrained designs. Evaluate thermal performance based on the specific PCB copper area available, as power dissipation capabilities vary significantly between minimum pad layouts and larger heat-sinking configurations.

Part Context

This part belongs to the DMT3022 series of advanced generation MOSFETs designed to minimize on-state resistance while maintaining superior switching performance. The series utilizes silicon technology optimized for high-efficiency power management applications within small surface-mount packages.