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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 17A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：17A (Tc)
- Rds On (Max) @ Id, Vgs：22mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：903pF @ 15V
- Power - Max：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type UXD)
- Grade：-
- Qualification：-
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Overview
The DMT3022UEV-7 is an N-channel enhancement mode MOSFET in a PowerDI®3333-8 (Type UXD) package. It features a 30V drain-source voltage rating and a typical on-resistance of 12.2mΩ at VGS=10V, rising to 17.6mΩ at VGS=4.5V. The device supports a continuous drain current of 17A at 25°C case temperature. Key electrical parameters include a gate threshold voltage range of 0.5V to 1.8V, total gate charge of 13.9nC at VGS=10V, and input capacitance of 903pF. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Ultra-low gate threshold voltage for efficient drive requirements
- Low on-resistance optimized for high-efficiency power management
- Integrated ESD protection circuitry
- Totally lead-free and fully RoHS compliant construction
Applications
- General purpose interfacing switch
- Power management functions
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details. The datasheet indicates that suffixes such as '-7' and '-13' correspond to different tape and reel quantities. Ensure the selected variant matches the required production volume and handling specifications before finalizing procurement orders.
Selection Notes
Select this component for applications requiring low on-state resistance and fast switching speeds within a 30V system. The ultra-low gate threshold voltage makes it suitable for low-voltage logic interfaces. Consider the thermal characteristics and package limitations when designing for high-current scenarios to ensure reliable operation under specified load conditions.
Part Context
This device belongs to Diodes Incorporated's advanced MOSFET lineup designed to minimize on-state resistance while maintaining superior switching performance. It utilizes the PowerDI®3333-8 surface-mount package, which provides a compact footprint suitable for space-constrained designs. The technology focuses on delivering high efficiency for modern power management systems.
Replacement Considerations
Consult the manufacturer's official cross-reference documentation for verified substitute part numbers. Do not assume compatibility based solely on similar voltage or current ratings without verifying pinout and electrical parameter alignment.
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum rating for gate-source voltage is ±12V.
Does the device include internal protection features?
Yes, the DMT3022UEV includes integrated ESD protection circuitry.
What is the operating temperature range?
The device supports an operating and storage temperature range from -55°C to +150°C.
