DMT30M9LPS-13

$2.99

Description：MOSFET BVDSS: 25V-30V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a51dc64f5ebf Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V-30V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：160.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：12121 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.6W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8 (Type K)
Package / Case：8-PowerTDFN

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DMT30M9LPS-13

Overview

The DMT30M9LPS-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI5060-8 surface-mount package. The device features a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 100A at +25°C case temperature. Static drain-source on-resistance (RDS(ON)) is specified as 1.0mΩ maximum at VGS=10V and 1.6mΩ maximum at VGS=4.5V, both tested at ID=25A. Total gate charge (Qg) is 160.5nC at VGS=10V. Operating and storage temperatures range from -55°C to +150°C.

Feature Summary

Engineered for high-efficiency power management with minimized on-state resistance and superior switching performance.
Includes 100% unclamped inductive switching capability to ensure reliable and robust end applications.
Features a thermally efficient package profile under 1.1mm for thin application designs.

Applications

Engine Management Systems
Body Control Electronics
DC-DC Converters
Synchronous Rectification

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm compliance with RoHS directives and halogen-free requirements during procurement. Ensure the component matches the PowerDI5060-8 mechanical dimensions for PCB layout compatibility. Validate that the manufacturer marking code 'T30M9LS' aligns with the ordered part number upon receipt.

Selection Notes

Select this component for applications requiring low conduction losses due to its sub-2mΩ on-resistance characteristics. Consider the 100A continuous current rating for high-power distribution tasks. Evaluate the thermal resistance parameters against the system's heat dissipation capabilities. Ensure the gate drive voltage meets the threshold requirements for optimal RDS(ON) performance.

Part Context

This part belongs to the DMT30 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is designed specifically for advanced information processing and power management sectors. The device integrates silicon technology within a molded plastic green molding compound case rated UL 94V-0.

Replacement Considerations

Consult official datasheets for cross-reference candidates within the same voltage and current class. Verify pinout compatibility and thermal resistance specifications before substitution.