DMT31M1LPSWQ-13

$0.51

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:2f18c32c8892 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：40A (Ta), 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：0.95mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：86 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5938 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.8W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMT31M1LPSWQ-13

Overview

The DMT31M1LPSWQ-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8/SWP package with a maximum profile of 1.1mm. The device features a typical RDS(ON) of 0.95mΩ at VGS=10V and 1.5mΩ at VGS=4.5V, supporting continuous drain currents of 130A (TC=25°C) or 40A (TA=25°C). It includes an integrated body diode with a forward voltage of 0.7V at 30A. The component is AEC-Q101 qualified for automotive applications.

Feature Summary

High conversion efficiency with minimized on-state losses via low RDS(ON)
Thermally efficient PowerDI5060-8/SWP package designed for cooler running
Suitable for thin applications due to less than 1.1mm package profile
Automotive grade qualification including AEC-Q101 and IATF 16949 manufacturing

Applications

Notebook battery power management
Load switches
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier containing 2,500 units in the PowerDI5060-8/SWP package. Confirm that the required RoHS compliance and Halogen-free status align with project specifications. Ensure the selected variant meets the necessary automotive change control requirements if intended for IATF 16949 certified facility production.

Selection Notes

Select this component when a low-profile surface-mount solution is required for high-current switching applications. The device offers superior thermal performance compared to standard packages, making it suitable for space-constrained designs. Consider the gate threshold voltage range and total gate charge characteristics to ensure compatibility with the driving circuitry's voltage levels and switching speed requirements.

Part Context

This part belongs to Diodes Incorporated's new generation MOSFET lineup designed to balance low on-resistance with fast switching capabilities. It is housed in the PowerDI family, which provides robust mechanical protection and efficient heat dissipation through an exposed drain pad. The device is specifically engineered to meet the stringent reliability standards required for modern portable electronics and automotive systems.

Replacement Considerations

Direct replacements must match the 30V BVDSS, N-channel configuration, and PowerDI5060-8/SWP footprint. Verify that any substitute maintains comparable RDS(ON) values and thermal resistance characteristics to ensure equivalent performance in existing board layouts without requiring design modifications.

FAQ

Is the DMT31M1LPSWQ-13 suitable for automotive applications?

Yes, the device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.