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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：24A (Ta), 138A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：43.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2979 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.7W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMT31M8LFVW-7 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8/SWP packaging and silicon technology. Key electrical parameters include a drain-source breakdown voltage of 30V, a maximum continuous drain current of 138A at TC=25°C, and a static drain-source on-resistance of 1.6mΩ at VGS=10V. The device operates within a temperature range of -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Small form factor thermally efficient package enables higher density end products and occupies significantly less board area than SO-8 packages.
- Features wettable flanks for improved optical inspection capabilities.
Applications
- Backlighting
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix when purchasing. The '-7' suffix indicates a packing quantity of 2,000 units in tape and reel format. Confirm that the required component matches this exact part number and packaging configuration to ensure compatibility with automated assembly processes.
Selection Notes
Select this component for applications requiring low RDS(ON) and compact footprint. Ensure thermal design accounts for the specified junction-to-ambient resistance values under intended operating conditions. Verify gate drive voltages align with the threshold requirements for optimal conduction characteristics.
Part Context
This component belongs to the Diodes Incorporated MOSFET product line, specifically designed as an N-channel enhancement mode device. It is engineered for high-density PCB layouts where space constraints are critical. The PowerDI3333-8 package provides a balance between thermal dissipation and physical size.
Replacement Considerations
An automotive-compliant version is available under the separate datasheet for DMT31M8LFVWQ. Verify if automotive qualification is required for the target application before selecting this standard industrial grade component.
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is 138A at a case temperature of +25°C and 19A at an ambient temperature of +25°C.
Does this component support automotive applications?
This specific part number is not explicitly designated as automotive-grade. An automotive-compliant variant is available under the separate part number DMT31M8LFVWQ.
