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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：24A (Ta), 138A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：43.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2979 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.7W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMT31M8LFVWQ-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8/SWP package and achieves a maximum on-resistance of 1.6mΩ at VGS=10V and 2.6mΩ at VGS=4.5V. The device supports a continuous drain current of up to 138A at TC=+25°C and features an operating temperature range from -55°C to +150°C. It is AEC-Q101 qualified for automotive applications.
Feature Summary
- Low on-state resistance minimizes conduction losses in power management circuits
- Compact PowerDI3333-8 package occupies significantly less board area than SO-8 equivalents
- Wettable flank design facilitates improved optical inspection during assembly
- Qualified for automotive environments with PPAP capability and IATF 16949 manufacturing
Applications
- Backlighting systems
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel carrier configuration. Confirm that the required package variant matches the PowerDI3333-8/SWP (Type UX) specification. Ensure compliance with RoHS directives and halogen-free requirements if mandated by the end product standards.
Selection Notes
Select this component when high-efficiency switching and minimal thermal footprint are critical. The low RDS(ON) characteristics support high-current applications within a small form factor. Consider the AEC-Q101 qualification if the deployment environment requires automotive-grade reliability and change control protocols.
Part Context
This part belongs to the DMT series of N-channel MOSFETs designed for high-density power solutions. The PowerDI3333-8 package provides enhanced thermal efficiency compared to traditional surface-mount packages. The device integrates robust avalanche energy handling capabilities suitable for inductive load switching.
Replacement Considerations
Direct substitutes include other 30V N-channel MOSFETs in the PowerDI3333-8 package with comparable RDS(ON) and current ratings. Verify pinout compatibility and thermal resistance specifications before integration.
