DMT31M9LFVW-7

Overview

The DMT31M9LFVW-7 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8/SWP (Type UX) package. Key electrical parameters include a drain-source breakdown voltage of 30V, a maximum continuous drain current of 141A at TC = +25°C, and a static drain-source on-resistance of 1.9mΩ at VGS = 10V. The device features a gate threshold voltage range of 1.2V to 2.5V and operates within a temperature range of -55°C to +150°C.

Feature Summary

• Low on-state resistance minimizes conduction losses for high-efficiency power management.
• Small form factor thermally efficient package enables higher density end products.
• Wettable flank design facilitates improved optical inspection during assembly.

Applications

• Backlighting
• Power-management functions
• DC-DC converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm that the component meets RoHS compliance and halogen-free requirements as defined by the manufacturer. Ensure the selected variant matches the required thermal and electrical specifications for the intended application environment.

Selection Notes

Select this component based on its low RDS(ON) characteristics and compact PowerDI3333-8 footprint. Evaluate thermal performance using the provided junction-to-case resistance values. Consider the wettable flank feature if automated optical inspection is critical to the manufacturing process.

Part Context

This part belongs to the Diodes Incorporated MOSFET family designed for surface-mount applications. It is specifically engineered to balance low on-state resistance with superior switching performance. The PowerDI3333-8 package provides a significant reduction in board area compared to traditional SO-8 packages while maintaining robust thermal dissipation capabilities.

Replacement Considerations

DMT31M9LFVW-13