DMT32M4LFG-13

$0.32

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:d220aaa691cd Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：67 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4366 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMT32M4LFG-13

Overview

The DMT32M4LFG-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 30 V and a continuous drain current (I_D) of 100 A at a case temperature of +25°C. The device offers a low static drain-source on-resistance (R_DS(ON)) of 1.7 mΩ max at V_GS = 10 V and 2.8 mΩ max at V_GS = 4.5 V. Packaged in a PowerDI3333-8 surface-mount format, it supports an operating junction temperature range from -55°C to +150°C.

Feature Summary

Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Small form factor thermally efficient package enables higher density end products and occupies just 33% of the board area compared to SO-8 packages.
Rated for 100% unclamped inductive switching (UIS) avalanche capability to handle transient energy events.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the specific ordering suffix matches the required tape and reel packaging quantity. Ensure compliance with RoHS directives and verify lead-free finish specifications against project requirements before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring low conduction losses and high current handling within a compact footprint. Evaluate thermal resistance parameters relative to the intended PCB copper layout and ambient conditions. Consider gate threshold voltage characteristics to ensure compatibility with available logic-level drive signals.

Part Context

This part belongs to the DMT32M4LFG series of advanced N-channel MOSFETs. It utilizes the PowerDI3333-8 package, which provides a compact solution for modern electronics. The product line emphasizes high efficiency and small physical dimensions suitable for space-constrained applications.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-reference electrical parameters such as breakdown voltage, on-resistance, and package dimensions to ensure functional equivalence without modifying existing circuit designs.