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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：68 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3944 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Ta), 83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMT32M4LPSW-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 package and features a maximum drain-source voltage (BVDSS) of 30V. The device offers a typical static drain-source on-resistance (RDS(ON)) of 1.7mΩ at VGS=10V and 2.8mΩ at VGS=4.5V, supporting a continuous drain current (ID) of 100A. Key electrical parameters include a gate-source voltage rating of ±20V, total gate charge of 68nC at VGS=10V, and a junction temperature range of -55°C to +150°C.
Feature Summary
- Thermally efficient PowerDI5060-8 package with a profile under 1.1mm for thin applications
- Low RDS(ON) characteristics designed to minimize on-state power losses
- Optimized switching performance through low input capacitance and fast switching speeds
- Lead-free finish compliant with RoHS directives and free of halogens and antimony
Applications
- DC-DC converters
- Power management circuits
- Load switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2500 units per reel. Confirm that the component meets the required automotive or industrial standards if applicable, as standard versions may differ from AEC-Q100 qualified parts. Ensure the design accommodates the specified thermal resistance values for proper heat dissipation in the target application environment.
Selection Notes
Select this component when a 30V rating is sufficient and high current handling up to 100A is required. The low on-resistance makes it suitable for efficiency-critical designs. Consider the PowerDI5060-8 package dimensions for PCB layout constraints. Verify that the gate drive voltage aligns with the optimal RDS(ON) performance conditions specified in the datasheet.
Part Context
This part belongs to the DMT series of N-channel MOSFETs from Diodes Incorporated. It is specifically engineered to balance low conduction losses with superior switching capabilities. The device is housed in a surface-mount PowerDI package, which provides a compact footprint while maintaining robust thermal performance for modern electronic systems.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on package type or voltage ratings without verifying pinout and electrical parameter alignment.
