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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100A
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：68 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3944 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMT32M4LPSWQ-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 100A at TC = +25°C. The device offers a typical static drain-source on-resistance (RDS(ON)) of 1.7mΩ at VGS = 10V and 2.8mΩ at VGS = 4.5V, both measured at ID = 20A. Packaged in a PowerDI5060-8/SWP (Type UX) surface-mount format with a profile under 1.1mm, it supports an operating temperature range from -55°C to +150°C.
Feature Summary
- Thermally efficient package design for cooler running applications
- Low RDS(ON) characteristics to minimize on-state losses
- Fast switching speed enabled by low input capacitance
- Suitable for automotive applications requiring specific change control
Applications
- DC-DC converters
- Load switches
- Power management circuits
Procurement Notes
Verify the complete part number including the -13 suffix to confirm tape and reel packaging quantities. Confirm AEC-Q101 qualification status if automotive PPAP capability is required. Ensure thermal management designs account for junction-to-case resistance values specified in the datasheet. Validate that PCB pad layouts match the PowerDI5060-8/SWP dimensions provided by the manufacturer.
Selection Notes
Select this component when high current handling near 100A is required within a 30V system. The low on-resistance makes it suitable for efficiency-critical power paths. Consider the thin package profile for space-constrained designs. Verify gate drive voltages align with the specified thresholds for optimal conduction performance.
Part Context
This device belongs to the DMT32M4LPSWQ series of N-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI5060-8/SWP package type, which provides a compact footprint with enhanced thermal dissipation capabilities compared to standard packages. The series is designed to balance low conduction losses with fast switching dynamics.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified cross-reference part numbers. Do not substitute based solely on electrical parameter matching without confirming package compatibility and thermal characteristics.
