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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：68 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4389 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 100W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMT32M5LPSW-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 package and features a maximum drain-source voltage (BVDSS) of 30V. The device supports a continuous drain current (ID) of 100A at TC = +25°C and offers a low on-resistance (RDS(ON)) of 2.0mΩ at VGS = 10V and 3.0mΩ at VGS = 4.5V, both measured at ID = 30A. Total gate charge (Qg) is 68nC at VGS = 10V. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- Features wettable flanks for improved optical inspection capabilities.
- Designed with a thermally efficient package profile under 1.1mm for thin applications.
- Includes 100% unclamped inductive switching (UIS) testing during production.
Applications
- DC-DC Converters
- Load Switch
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the required RoHS compliance level matches the applicable EU directives. Ensure the design accommodates the specified thermal resistance values for the intended mounting conditions.
Selection Notes
Select this component when a 30V rating and high current handling capability are required in a compact form factor. The low RDS(ON) minimizes conduction losses, while the fast switching speed supports high-frequency operation. Verify that the gate drive voltage aligns with the specified thresholds for optimal performance.
Part Context
This part belongs to the DMT series of advanced N-channel MOSFETs from Diodes Incorporated. It is designed to minimize on-state losses while maintaining superior switching performance. The device is suitable for power management applications requiring high efficiency and reliability in space-constrained environments.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on similar voltage or current ratings without verifying pin configurations and electrical characteristics.
FAQ
What is the maximum pulsed drain current for the DMT32M5LPSW-13?
The maximum pulsed drain current (IDM) is 350A, defined by a 10μs pulse duration with a duty cycle of 1%.
Is the DMT32M5LPSW-13 compliant with automotive standards?
For automotive applications requiring AEC-Q100/101/200 qualification, PPAP capability, and IATF 16949 manufacturing, contact Diodes Incorporated directly as standard parts may not include these specific controls.
