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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V U-DFN2020-
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1009 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：860mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMT35M4LFDF-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source on-resistance of 6mΩ at VGS=10V and 10.5mΩ at VGS=4.5V, supporting continuous drain currents of 13A and 10A respectively. The device utilizes a U-DFN2020-6 package with a 0.6mm profile and a PCB footprint of 4mm². Key electrical parameters include a gate threshold voltage range of 1.15V to 2.5V, total gate charge of 8.1nC at VGS=4.5V and 14.9nC at VGS=10V, and a junction-to-ambient thermal resistance of 147°C/W.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Features a low-profile 0.6mm package with a compact 4mm² PCB footprint ideal for space-constrained applications.
- Totally lead-free and fully RoHS compliant, also halogen and antimony free.
Applications
- General purpose interfacing switches
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel carrier configuration as documented in the manufacturer's ordering information. Confirm that the required packaging quantity aligns with your production volume requirements before finalizing procurement orders.
Selection Notes
Select this component when a 30V N-channel MOSFET with low on-resistance and a compact U-DFN2020-6 package is required. Ensure the application operates within the specified -55°C to +150°C junction temperature range and respects the continuous drain current limits defined for the intended thermal conditions.
Part Context
This part belongs to the DMT35M4LFDF series from Diodes Incorporated, representing a generation of MOSFETs optimized for low on-resistance and switching efficiency. The family targets general-purpose interfacing and power management applications requiring small form factors.
Replacement Considerations
Consult the manufacturer's documentation for equivalent circuits or direct substitutes. Verify pinout compatibility and electrical parameter alignment if considering alternative manufacturers.
FAQ
What is the maximum body diode forward current?
The maximum body diode forward current (IS) is 2.4 A under steady-state conditions.
Is the device suitable for automotive applications?
For automotive applications requiring specific change control, parts qualified to AEC-Q100/101/104/200 and PPAP capable, customers must contact Diodes Incorporated directly.
