DMT35M4LFDF-7

$0.56

Description：MOSFET BVDSS: 25V~30V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e797bdf466c3 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1009 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：860mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMT35M4LFDF-7

Overview

The DMT35M4LFDF-7 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a low on-resistance (RDS(ON)) of 6mΩ at VGS=10V with a continuous drain current (ID) of 13A. At VGS=4.5V, RDS(ON) is 10.5mΩ with an ID of 10A. The device operates within a temperature range of -55°C to +150°C, dissipates up to 1.7W, and utilizes a U-DFN2020-6 package.

Feature Summary

Designed for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
Features a 0.6mm profile and a compact PCB footprint of 4mm², making it ideal for low-profile applications.
Totally lead-free and fully RoHS compliant, ensuring compliance with environmental directives.

Applications

General purpose interfacing switches
Power management functions

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm that the component meets all applicable regulatory standards required for your target market. Ensure compatibility with your manufacturing processes regarding moisture sensitivity levels and soldering requirements before finalizing procurement decisions.

Selection Notes

Select this component when a low-profile N-channel MOSFET with high current handling capabilities is required. Consider the thermal resistance characteristics and package size constraints of your design. Evaluate the gate threshold voltage and total gate charge to ensure compatibility with your driving circuitry and switching frequency requirements.

Part Context

This part belongs to the DMT series of MOSFETs from Diodes Incorporated, specifically designed for general-purpose switching and power management. It is housed in a U-DFN2020-6 package, which provides a small form factor suitable for space-constrained designs. The series emphasizes low on-resistance and efficient switching performance.

Replacement Considerations

Consult official manufacturer documentation for verified equivalent parts. Cross-referencing should be performed carefully to ensure electrical parameters, pin configurations, and thermal characteristics match the original design requirements.