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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V X2-DFN2020
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1009 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：910mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN2020-6 (Type W)
- Package / Case：6-PowerXDFN
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Overview
The DMT35M4LFDF4-13 is a 30V N-channel enhancement mode MOSFET in an X2-DFN2020-6 package. It features a maximum drain-source voltage (BVDSS) of 30V and a low on-resistance (RDS(ON)) of 9mΩ at VGS=10V and 13.5mΩ at VGS=4.5V. Continuous drain current (ID) reaches 12A at TA=+25°C with VGS=10V, or 10A at VGS=4.5V. The device supports a pulsed drain current (IDM) of 80A and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Low profile 0.4mm case height suitable for space-constrained designs
- Minimized on-state resistance for high-efficiency power management
- Totally lead-free and fully RoHS compliant construction
- Halogen and antimony free green device formulation
Applications
- General purpose interfacing switch
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the X2-DFN2020-6 case type matches the required PCB footprint dimensions. Ensure compliance with moisture sensitivity level 1 requirements during storage and handling procedures.
Selection Notes
Select this component when a compact 30V N-channel MOSFET with low RDS(ON) is required. The 0.4mm profile and small 4mm² footprint make it suitable for dense layouts. Verify gate threshold voltage compatibility with the driving logic levels for optimal switching performance.
Part Context
This part belongs to Diodes Incorporated's advanced generation MOSFET series designed for high-efficiency applications. It utilizes an X2-DFN2020-6 package to provide thermal and electrical performance in a minimal surface area. The device integrates superior switching characteristics with low conduction losses.
Replacement Considerations
The datasheet lists DMT35M4LFDF4-7 as a variant with identical electrical specifications but different packaging quantity. No other direct substitute part numbers are documented in the provided source material.
