DMT35M4LSS-13

Overview

The DMT35M4LSS-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source on-resistance of 6mΩ at VGS=10V and 10.1mΩ at VGS=4.5V. The device supports a continuous drain current of up to 38A at TC=+25°C and 14A at TA=+25°C. It operates within a junction temperature range of -55°C to +150°C, with a total power dissipation of 1.3W at TA=+25°C. The component utilizes an SO-8 surface-mount package.

Feature Summary

• Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
• Excellent figure of merit (FOM) characterized by the product of gate-drain charge and on-resistance.
• Small form factor thermally efficient package enables higher density end products.
• 100% unclamped inductive switching (UIS) tested in production to ensure robust reliability.

Applications

• Backlighting
• Power-management functions
• DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packing quantity of 2,500 units as documented in the official datasheet. Confirm that the SO-8 package material meets the required UL flammability classification rating of 94V-0. Ensure compliance with RoHS directives and halogen-free requirements if specified for the target application environment.

Selection Notes

Select this component when designing circuits requiring low conduction losses at 30V ratings. Evaluate thermal management strategies based on the junction-to-ambient thermal resistance of 90.6 °C/W under steady-state conditions. Consider the gate threshold voltage range of 1.15V to 2.5V for logic-level compatibility. Assess the safe operating area curves to ensure operation remains within limits during transient events.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on optimizing the trade-off between static on-resistance and dynamic switching characteristics. The DMT35M4LSS variant specifically targets compact power management designs where space constraints and thermal efficiency are critical design parameters.

Replacement Considerations

Consult official manufacturer substitution guides or contact Diodes Incorporated directly for verified equivalent parts. Do not assume cross-compatibility with other manufacturers' devices without validating pinout, electrical parameters, and thermal characteristics against the original datasheet specifications.

FAQ

What is the maximum continuous drain current at case temperature of +25°C?

The maximum continuous drain current is 38A when the case temperature is maintained at +25°C.

Is the device suitable for automotive applications?

For automotive applications requiring specific change control, AEC-Q qualification, or PPAP capability, customers must contact Diodes Incorporated or their local representative directly.

What is the typical gate charge at VGS = 10V?

The typical total gate charge is 6.7 nC when measured at VDD = 15V and ID = 9A.