DMT35M7LFV-7

$0.95

Description：MOSFET N-CH 30V 76A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:781e5bc52228 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 76A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1667 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.98W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8 (Type UX)
Package / Case：8-PowerVDFN

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DMT35M7LFV-7

Overview

The DMT35M7LFV-7 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type UX) package. It features a drain-source voltage (BVDSS) of 30V and a maximum continuous drain current (ID) of 76A at TC = +25°C. The device offers a low on-state resistance (RDS(ON)) of 5.0mΩ max at VGS = 10V and 8.5mΩ max at VGS = 4.5V. Total gate charge (Qg) is 36nC max at VGS = 10V. Operating temperature range spans -55°C to +150°C.

Feature Summary

Low RDS(ON) minimizes on-state losses for high efficiency power management.
Small form factor thermally efficient package enables higher density end products.
Occupies just 33% of the board area occupied by SO-8 packages.
ESD protected gate structure.

Applications

Power Management Functions
Analog Switch

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. The '-7' suffix indicates a 2,000-unit tape and reel configuration. Confirm compliance with RoHS directives and halogen-free requirements if specified for your manufacturing process. Ensure the component is sourced through authorized channels to guarantee authenticity and adherence to quality standards.

Selection Notes

Select this component when a compact footprint is critical alongside low conduction losses. The 30V rating suits applications requiring moderate voltage handling. Evaluate thermal performance based on the junction-to-ambient resistance of 131°C/W for steady-state operation on FR-4 boards. Consider the ESD protection feature for robustness in sensitive circuit environments.

Part Context

This part belongs to the DMT series of N-channel MOSFETs designed for advanced power management solutions. It utilizes the PowerDI3333-8 case style, which provides a lead-free, green molding compound construction. The device is optimized for high-density PCB layouts while maintaining superior switching performance and low thermal resistance characteristics.

Replacement Considerations

Consult official documentation for verified substitutes. Cross-reference parameters such as BVDSS, RDS(ON), and package dimensions before considering alternatives.