DMT36M1LPS-13

$0.45

Description：MOSFET N-CH 30V 65A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e7d2431e7131 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 65A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1155 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.6W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMT36M1LPS-13

Overview

The DMT36M1LPS-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 surface-mount package. It features a drain-source breakdown voltage of 30V and a maximum continuous drain current of 65A at a case temperature of +25°C. The device exhibits a static drain-source on-resistance of 6mΩ at VGS=10V and 9.8mΩ at VGS=4.5V. Total gate charge is 16.7nC at VGS=10V. Operating temperatures range from -55°C to +150°C.

Feature Summary

Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Small form factor thermally efficient package enables higher density end products.
100% unclamped inductive switching tested to ensure more reliability.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500 units per tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component meets RoHS compliance and halogen-free requirements by checking the official datasheet notes regarding environmental standards before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits requiring a 30V N-channel MOSFET with low on-resistance in a compact PowerDI5060-8 footprint. Ensure the application operates within the specified junction temperature range of -55°C to +150°C and accounts for thermal dissipation limits based on the board layout and ambient conditions.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is specifically engineered for high-density power management solutions where minimizing conduction losses and optimizing switching speed are critical design parameters.

Replacement Considerations

Consult the manufacturer's cross-reference documentation or contact Diodes Incorporated directly for verified substitute part numbers. Do not assume functional equivalence with other MOSFETs without validating pinout compatibility, electrical ratings, and thermal characteristics against the original datasheet.