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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：61A (Ta), 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：0.55mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：152.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：11112 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.13W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMT3M60LPSW-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8/SWP package and features a maximum drain-source voltage (BVDSS) of 30V. The device offers a low on-resistance (RDS(ON)) of 0.55mΩ at VGS=10V and 0.95mΩ at VGS=4.5V, supporting continuous drain currents of 150A at TC=+25°C with VGS=10V. It includes 100% UIS testing and operates within a temperature range of -55°C to +150°C.
Feature Summary
- Designed to minimize RDS(ON) while maintaining superior switching performance for high conversion efficiency.
- Features a thermally efficient PowerDI5060-8 package with a profile under 1.1mm, ideal for thin applications.
- Includes 100% Unclamped Inductive Switch (UIS) testing in production to ensure reliability.
Applications
- Notebook battery power management
- Load switches
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2500 units per reel. Confirm that the component meets RoHS compliance standards and is halogen and antimony free as defined by the manufacturer's green product guidelines. Ensure the selected part matches the PowerDI5060-8/SWP (Type UX) mechanical outline for proper PCB footprint compatibility.
Selection Notes
Select this component when a 30V rating is required alongside high current handling capabilities up to 150A. The low thermal resistance and small form factor make it suitable for space-constrained designs. Evaluate gate threshold voltage requirements against the specified 1V to 3V range to ensure adequate drive levels from the controller.
Part Context
This device belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered for modern portable electronics and power management systems where minimizing conduction losses and physical size are critical design constraints.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on package type or nominal voltage ratings without verifying electrical parameters and pin configurations.
FAQ
What is the maximum pulsed drain current capability?
The maximum pulsed drain current (IDM) is rated at 600A for a 380μs pulse duration with a 1% duty cycle.
Is the device qualified for automotive applications?
For automotive applications requiring AEC-Q100/101/104/200 qualification and IATF 16949 manufacturing, customers must contact Diodes Incorporated directly.
