DMT3M70LPSWQ-13

$0.88

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:882c0f27df79 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：61A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：0.55mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：152.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：11112 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.13W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMT3M70LPSWQ-13

Overview

The DMT3M70LPSWQ is a 30V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source voltage of 30V and gate-source voltage of ±20V. At VGS=10V, RDS(ON) is 0.55mΩ max with ID up to 150A (TC=+25°C). At VGS=4.5V, RDS(ON) is 0.95mΩ max with ID up to 120A. Pulsed drain current reaches 600A. Avalanche energy is 345mJ. Operating temperature range is -55°C to +150°C.

Feature Summary

High conversion efficiency with low on-state losses
Thermally efficient package for cooler running applications
Suitable for automotive applications requiring specific change control
Lead-free finish; RoHS compliant

Applications

Notebook battery power management
Load switches
Body control electronics
DC-DC converters

Procurement Notes

Verify the exact ordering suffix '-13' corresponds to the 2,500 Tape & Reel carrier. Confirm AEC-Q101 qualification and PPAP capability requirements are met for your specific automotive application context before finalizing procurement.

Selection Notes

Select this component when a 30V rating and high continuous current handling near 150A at case temperature are required. The low thermal resistance supports high-power density designs. Ensure the PCB layout matches the recommended pad dimensions for optimal heat dissipation.

Part Context

This device belongs to Diodes Incorporated's new generation MOSFET lineup designed to minimize RDS(ON) while maintaining superior switching performance. It utilizes the PowerDI5060-8/SWP (Type UX) package, which offers a profile under 1.1mm for thin applications.