DMT4004LPS-13

$1.19

Description：MOSFET N-CH 40V 26A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ee0cccb04791 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 26A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：26A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：82.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4508 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.6W (Ta), 138W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMT4004LPS-13

Overview

The DMT4004LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 40 V and a low on-state resistance (R_DS(ON)) of 2.5 mΩ at V_GS = 10 V, or 4 mΩ at V_GS = 4.5 V. The device supports a continuous drain current (I_D) of 90 A at TC = +25°C. Packaged in a PowerDI5060-8 surface-mount format, it offers high thermal efficiency with a junction-to-case thermal resistance of 0.9 °C/W.

Feature Summary

Engineered to minimize power losses through exceptionally low on-state resistance while maintaining superior switching performance.
Features 100% unclamped inductive switching capability to ensure robust reliability in demanding end applications.
Utilizes low gate charge characteristics to effectively minimize switching losses during operation.

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 2500 units. Confirm that the standard commercial grade meets application requirements, as automotive-grade variants require a 'Q-suffix' designation for AEC-Q qualification and IATF 16949 manufacturing compliance. Ensure compatibility with JEDEC standards for high-reliability environments.

Selection Notes

Select this component for high-efficiency power management circuits requiring a 40 V rating and high current handling up to 90 A. The PowerDI5060-8 package provides excellent thermal dissipation capabilities suitable for space-constrained designs. Evaluate the gate threshold voltage and total gate charge parameters against the driving circuit's output capabilities to optimize switching speed and minimize driver losses.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed specifically for applications where minimizing conduction and switching losses is critical. The device utilizes silicon technology and is housed in a lead-free, halogen-free molded plastic package compliant with UL flammability ratings.

Replacement Considerations

For automotive applications requiring specific change control, refer to the related automotive grade parts with a Q-suffix. These variants are qualified to AEC-Q standards and manufactured in IATF 16949 certified facilities. Verify pinout and thermal characteristics when substituting with other MOSFETs in the same voltage class.

FAQ

Is the DMT4004LPS-13 qualified for automotive applications?

No, this specific part number is not automotive qualified. For automotive applications requiring AEC-Q qualification and PPAP capability, you must select the related automotive grade part which includes a 'Q-suffix' in its part number.