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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V U-DFN2020-
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：11.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1179 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMT4008LFDF-13 is a 40V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 40V and a continuous drain current (ID) of 11.8A at +25°C. The device offers a low on-state resistance (RDS(ON)) of 9.5mΩ max at VGS = 10V and 15.5mΩ max at VGS = 4.5V. Packaged in a U-DFN2020-6 (Type F) case with a 0.6mm profile, it supports a total power dissipation of 0.8W at TA = +25°C. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Low RDS(ON) minimizes on-state losses for high-efficiency power management
- Excellent Qgd x RDS(ON) product (Figure of Merit)
- Fast switching speed capability
- Totally lead-free and fully RoHS compliant
Applications
- Power Management Functions
- DC-DC Converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required reel quantity of 10,000 units per manufacturer specifications. Confirm that the U-DFN2020-6 (Type F) package dimensions align with the target PCB footprint layout. Ensure compliance with moisture sensitivity level 1 requirements during storage and handling processes.
Selection Notes
Select this component when a compact 0.6mm profile is required alongside low conduction losses. Evaluate thermal performance based on the specified junction-to-ambient resistance values for the intended copper pad area. Consider the gate threshold voltage range for compatibility with the driving logic levels in the application circuit.
Part Context
This part belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology within a molded plastic green molding compound case. The device is designed to balance low on-resistance with superior switching performance for modern electronic designs.
Replacement Considerations
Consult official documentation for verified substitutes. Cross-referencing requires matching BVDSS, ID, RDS(ON), and package type constraints.
FAQ
What is the maximum pulsed drain current?
The maximum pulsed drain current is 70A with a 10μs pulse duration and 1% duty cycle.
Is the device suitable for automotive applications?
For automotive applications requiring AEC-Q100/101/200 qualification or IATF 16949 manufacturing, contact Diodes Incorporated directly as standard parts may not meet these specific change control requirements.
