DMT4011LFG-13

$0.70

Description：MOSFET N-CH 40V 30A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:629f686fad04 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 30A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15.1 nC @ 10 V
Vgs (Max)：+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds：767 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：15.6W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8
Package / Case：8-PowerVDFN

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DMT4011LFG-13

Overview

The DMT4011LFG-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8 surface-mount packaging. The device features a drain-source voltage (V_DSS) of 40V and a continuous drain current (I_D) of 30A at TC = +25°C. Maximum static drain-source on-resistance (R_DS(ON)) is 11.5mΩ at V_GS = 10V and 17.8mΩ at V_GS = 4.5V, both measured at I_D = 20A. Total gate charge (Q_g) is 15.1nC at V_GS = 10V. Thermal resistance from junction to case (R_θJC) is 8°C/W.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Features an advanced technology optimized specifically for DC-DC converter efficiency.
Includes 100% Unclamped Inductive Switching (UIS) testing in production to ensure robust end-application reliability.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 3,000 units per manufacturer specifications. Confirm that the PowerDI3333-8 package dimensions align with the target PCB footprint layout. Ensure compliance with RoHS and halogen-free requirements if mandated by the final assembly standards.

Selection Notes

Select this component when a low-profile, thermally efficient solution is required for 40V logic-level switching applications. The device supports operation up to a maximum junction temperature of 150°C. Evaluate the thermal resistance characteristics against the specific copper pad layout and ambient conditions of the target circuit design.

Part Context

This part belongs to the DMT4011LFG series of N-channel MOSFETs produced by Diodes Incorporated. It is housed in the PowerDI3333-8 package, which provides a small form factor suitable for high-density electronic products. The device is designed as a lead-free, fully RoHS compliant component.

Replacement Considerations

The datasheet lists DMT4011LFG-7 as an alternative part number within the same product family, differing only in the standard tape and reel packaging quantity.