ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V U-DFN2020-
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：6.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：26mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：362 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
Download product information
Overview
The DMT4031LFDF-7 is a 40V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 40V and a continuous drain current (ID) of 6.8A at +25°C. The device offers a low on-resistance (RDS(ON)) of 26mΩ at VGS=10V and 47mΩ at VGS=4.5V. Packaged in a U-DFN2020-6 (Type F) case with a 0.6mm profile, it supports a junction temperature range of -55°C to +150°C.
Feature Summary
- Features an ultra-low profile design with a 0.6mm height for space-constrained applications.
- Includes integrated ESD protection on the gate terminal.
- Manufactured using lead-free materials that are fully RoHS compliant and halogen/antimony free.
- Undergoes 100% unclamped inductive switching (UIS) testing during production.
Applications
- DC-DC Converters
- Adaptor Switches
- Wireless Charging Systems
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm compliance requirements such as RoHS status and automotive qualification standards directly with the manufacturer or authorized distributors before procurement.
Selection Notes
Select this component based on its 40V breakdown voltage and 6.8A continuous current rating. Evaluate thermal resistance values relative to the intended PCB copper area and ambient conditions. Ensure the gate drive voltage aligns with the specified RDS(ON) test conditions for optimal efficiency.
Part Context
This part belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the U-DFN2020-6 package type, designed for surface-mount technology. The product line emphasizes minimizing on-state resistance while maintaining robust switching performance for power management circuits.
Replacement Considerations
Consult official datasheets for cross-reference data. Verify pinout compatibility, voltage ratings, and thermal characteristics when evaluating alternative components.
