DMT40M9LPS-13

DMT40M9LPS-13

$0.69
  • Description:MOSFET BVDSS: 31V-40V POWERDI506
  • Series:*
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:1c575f26f003 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET BVDSS: 31V-40V POWERDI506
  • Series:*
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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DMT40M9LPS-13

Overview

The DMT40M9LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI5060-8 surface-mount packaging to provide efficient thermal management and compact board space utilization. The device features a drain-source voltage (Vdss) rating of 40 V and a continuous drain current (Id) capability of 22 A at ambient temperature, extending to 100 A at case temperature. Key electrical characteristics include a maximum on-resistance (Rds(on)) of 3.3 mΩ at Vgs = 10 V, ensuring low conduction losses. The component operates within a junction temperature range of -55°C to 175°C.

Feature Summary

  • Integrated thermal pad design in PowerDI5060-8 package for enhanced heat dissipation
  • Low on-resistance optimized for high-efficiency power switching applications
  • Automotive-grade reliability compliant with AEC-Q101 standards

Applications

  • Automotive power distribution systems
  • DC-DC converter output stages
  • Motor control circuits

Procurement Notes

Verify the specific suffix '-13' corresponds to the tape-and-reel packaging configuration required for your assembly line. Confirm that the AEC-Q101 qualification status meets your automotive or industrial quality requirements. Ensure the PowerDI5060-8 footprint matches your PCB layout guidelines before finalizing procurement orders.

Selection Notes

Select this component when a 40 V N-channel MOSFET with low Rds(on) and high current handling is required in a compact SMD form factor. The 3.3 mΩ resistance at 10 V gate drive makes it suitable for low-voltage, high-current applications where efficiency is critical. Consider the 175°C junction temperature rating for environments requiring extended thermal operation compared to standard commercial grade devices.

Part Context

This part belongs to the DMT series of MOSFETs from Diodes Incorporated, specifically designed for power management applications. The DMTH prefix often indicates automotive qualification, while the base model number defines the voltage and current ratings. The PowerDI package family offers superior thermal performance over traditional TO-220 or SO-8 packages due to direct die attachment to the exposed pad.

Replacement Considerations

Check for exact pinout compatibility with existing designs. Verify that substitute parts meet the same AEC-Q101 automotive qualification if used in vehicle electronics. Ensure the replacement maintains the 40 V Vdss and similar Rds(on) specifications to avoid thermal issues.

DMT40M9LPS-13DMT40M9LPS-13
$0.69
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