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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 11.9A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：11.9A (Ta), 30.2A (Tc)
- Rds On (Max) @ Id, Vgs：10.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：891pF @ 20V
- Power - Max：2.34W (Ta), 14.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type UXC)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMT47M2LDVQ-7 is a dual N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a 40V drain-source voltage rating and a maximum on-resistance of 10.8mΩ at VGS=10V. The device supports a continuous drain current of 30.2A at TC=+25°C and operates within a junction temperature range of -55°C to +150°C. Total gate charge is 14nC, with turn-on delay time of 3.95ns and fall time of 8.53ns.
Feature Summary
- Dual channel configuration for space-efficient circuit designs
- Qualified to AEC-Q101 standards for automotive reliability
- High conversion efficiency through low on-state losses
- Fast switching speed supported by low input capacitance
Applications
- Motor controls
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and carrier type. Confirm that the component meets all required automotive quality standards and PPAP capabilities before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring dual N-channel MOSFETs with high current handling capabilities. Ensure thermal management strategies account for the specified power dissipation limits and thermal resistance values under expected operating conditions.
Part Context
This part belongs to the DMT47 series of automotive-grade MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a lead-free, RoHS-compliant PowerDI3333-8 package designed for surface mount applications.
Replacement Considerations
Consult official manufacturer substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully when considering equivalent components from other manufacturers.
FAQ
Is the DMT47M2LDVQ-7 suitable for automotive applications?
Yes, it is qualified to AEC-Q101 standards and is manufactured in IATF 16949 certified facilities.
What is the maximum continuous drain current?
The maximum continuous drain current is 30.2A at a case temperature of +25°C.
Does the device support unclamped inductive switching?
Yes, it undergoes 100% Unclamped Inductive Switching testing in production to ensure robustness.
