DMT47M2SFVW-13

$0.21

Description：MOSFET N-CH 40V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:f8f81f92b93d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：15.4A (Ta), 49.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：897 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.67W (Ta), 27.1W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMT47M2SFVW-13

Overview

The DMT47M2SFVW-13 is a surface-mount N-channel enhancement mode MOSFET in the PowerDI3333-8/SWP (Type UX) package. It features a 40V drain-source voltage rating and a maximum on-resistance of 7.5mΩ at VGS=10V. Continuous drain current reaches 49.1A at TC=+25°C and 15.4A at TA=+25°C. Total power dissipation is rated at 27.1W at TC=+25°C and 2.67W at TA=+25°C. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed for high-efficiency power management with minimized on-state resistance and superior switching performance.
Features wettable flank terminals to facilitate improved optical inspection during assembly.
Qualified to JEDEC standards for high reliability, including 100% unclamped inductive switching testing.
Manufactured as a totally lead-free, fully RoHS compliant, halogen-free, and antimony-free green device.

Applications

Motor controls
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel carrier configuration. Confirm that the required automotive-grade variant is not needed; if AEC-Q101 qualification is mandatory, the separate DMT47M2SFVWQ datasheet must be referenced instead of this standard industrial version.

Selection Notes

Select this component when a 40V N-channel MOSFET with low RDS(ON) is required for compact designs. The PowerDI3333-8/SWP package provides thermal advantages over standard DFNs. Ensure gate drive voltages align with the 10V specification for optimal conduction characteristics and verify PCB layout supports the exposed drain pad for effective heat dissipation.

Part Context

This part belongs to Diodes Incorporated's new generation MOSFET lineup designed to balance low on-state resistance with fast switching capabilities. It utilizes silicon technology within a molded plastic 'Green' compound casing. The product marking code is M2S, followed by the date code YYWW.

Replacement Considerations

An automotive-compliant alternative is available under the separate part number DMT47M2SFVWQ. Verify if the specific AEC-Q101 qualification of the Q-suffix variant is necessary for the target application environment.