DMT47M2SFVW-7

$0.80

Description：MOSFET N-CH 40V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:530cff7ac42c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：15.4A (Ta), 49.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：897 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.67W (Ta), 27.1W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMT47M2SFVW-7

Overview

The DMT47M2SFVW-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source breakdown voltage and a maximum on-state resistance of 7.5mΩ at VGS=10V. The device supports a continuous drain current of 49.1A at TC=+25°C and 15.4A at TA=+25°C. It operates within a junction temperature range of -55°C to +150°C, with total power dissipation rated at 2.67W (TA) and 27.1W (TC). The component utilizes a PowerDI3333-8/SWP package.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
Features wettable flank terminals to facilitate improved optical inspection during assembly.
Undergoes 100% unclamped inductive switching testing in production to ensure robust end-application reliability.
Qualified to JEDEC standards for high reliability and fully compliant with RoHS directives.

Applications

Motor controls
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm packaging quantity and carrier type. Confirm that the required variant meets all necessary environmental compliance standards for your target market. Ensure that thermal management designs account for the specified junction-to-ambient and junction-to-case thermal resistances under actual operating conditions.

Selection Notes

Select this component when low conduction losses are critical alongside fast switching speeds in compact surface-mount layouts. Evaluate the thermal requirements based on the specific ambient or case temperature conditions of the final assembly. Consider the gate charge characteristics for driving circuit compatibility in high-frequency power conversion topologies.

Part Context

This part belongs to the DMT47M2 series of N-channel MOSFETs from Diodes Incorporated. It shares the same electrical ratings as other variants in the family but differs in physical packaging and termination style. The SWP designation indicates a specific lead frame configuration designed for enhanced solderability and visual inspection capabilities compared to standard flat leads.

Replacement Considerations

The automotive-compliant version DMT47M2SFVWQ serves as a qualified alternative for automotive applications requiring AEC-Q101 certification. Verify pinout compatibility and exact parameter matching before substituting any other MOSFET models in existing designs.