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Product Detailed Parameters
- Description：MOSFET N-CH 50V 9.1A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：9.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：902.7 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：820mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMT5015LFDF-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 50V drain-source voltage rating and operates with a continuous drain current of 28A at 25°C. The device exhibits a maximum on-resistance of 15mΩ at Vgs=10V. It utilizes a U-DFN2020-6 surface-mount package, providing a thermal dissipation capacity of 1.3W. The component supports a junction temperature range from -55°C to +150°C and includes a bare pad for improved heat transfer.
Feature Summary
- Single N-channel enhancement mode configuration
- Low on-resistance for efficient power switching
- Surface-mount U-DFN2020-6 package with exposed thermal pad
Applications
- DC-DC converter circuits
- Power management modules
- Load switching applications
Procurement Notes
Verify the specific suffix '-7' corresponds to the tape and reel packaging format required for automated assembly processes. Confirm that the U-DFN2020-6 footprint matches the design layout, particularly regarding the exposed pad soldering requirements for adequate thermal performance. Ensure compliance with RoHS directives as specified in the manufacturer documentation.
Selection Notes
Select this component when a compact N-channel MOSFET with 50V blocking capability and low conduction losses is required. The U-DFN2020-6 package offers a balance between current handling and board space efficiency. Consider the 15mΩ on-resistance for minimizing power dissipation in high-current paths compared to higher resistance alternatives.
Part Context
This part belongs to the DMT series of N-channel MOSFETs from Diodes Incorporated. The series focuses on small-signal and power switching applications requiring robust performance in minimal footprints. The DMT5015 variant specifically targets 50V systems, distinguishing it from lower or higher voltage counterparts within the same product family.
Replacement Considerations
DMT5015LFDF-13 is an equivalent part number from the same manufacturer offering identical electrical characteristics but potentially differing in packaging quantity or type.
