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Product Detailed Parameters
- Description：MOSFET N-CH 60V PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：18A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：48.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3150 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.98W (Ta), 62.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMT6005LFG-7 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 surface-mount package. The device features a maximum drain-source breakdown voltage of 60V and a continuous drain current rating of 100A at a case temperature of +25°C. Static drain-source on-resistance is specified as 4.1mΩ at VGS=10V, 6.3mΩ at VGS=6V, and 7mΩ at VGS=4.5V. Total gate charge is typically 48.7nC at VGS=10V. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
- Features a small form factor thermally efficient package that occupies just 33% of the board area compared to SO-8 packages.
- Manufactured with lead-free finish and complies with RoHS directives; halogen and antimony free.
- Undergoes 100% unclamped inductive switching (UIS) testing in production to ensure robust end application reliability.
Applications
- Synchronous rectification
- Motor controls
- DC-DC converters
- Power management
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm compliance requirements such as RoHS or automotive standards if applicable to your design. Ensure thermal management aligns with the specified junction-to-ambient and junction-to-case thermal resistance values provided in the datasheet.
Selection Notes
Select this component when low on-resistance and compact footprint are critical for high-density designs. Evaluate the gate threshold voltage and total gate charge to ensure compatibility with your driver circuitry. Consider the thermal characteristics and safe operating area curves to validate performance under expected load and temperature conditions.
Part Context
This part belongs to the DMT6005LFG series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for general-purpose power switching applications requiring high efficiency and low conduction losses within a compact surface-mount form factor.
Replacement Considerations
DMT6005LFG-13 is an alternative packaging option within the same product line, differing only in tape and reel quantity.
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is 100A at a case temperature of +25°C and 80A at a case temperature of +70°C.
Is the device suitable for automotive applications?
For automotive applications requiring specific change control, AEC-Q qualification, PPAP capability, and manufacturing in IATF 16949 certified facilities, customers must contact Diodes Incorporated directly.
