DMT6005LPS-13

$0.72

Description：MOSFET N-CHA 60V 17.9A POWERDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6985d0cc2edd Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CHA 60V 17.9A POWERDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：17.9A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：47.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2962 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.6W (Ta), 125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMT6005LPS-13

Overview

The DMT6005LPS-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI5060-8 packaging and silicon technology. The device features a maximum drain-source breakdown voltage of 60V and a continuous drain current of 125A at TC = +25°C. Static drain-source on-resistance is rated at 4.5mΩ max at VGS = 10V and 6.5mΩ max at VGS = 4.5V. Total gate charge is 47.1nC at VGS = 10V. Operating temperature range spans from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Features 100% unclamped inductive switching (UIS) testing in production to ensure robust end application reliability.
Low gate charge characteristics minimize switching losses during operation.

Applications

High frequency switching
Synchronized rectification
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance standards and is halogen and antimony free as defined by the manufacturer's green product guidelines. Ensure the selected variant matches the required PowerDI5060-8 mechanical dimensions for PCB layout compatibility.

Selection Notes

Select this component when low static drain-source on-resistance is critical for minimizing power losses in high current applications. Consider the 60V rating and 125A continuous drain current capability for suitable thermal management requirements. Evaluate the total gate charge specifications against driver capabilities to optimize switching speed and efficiency within the target circuit design constraints.

Part Context

This part belongs to the DMT6005 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on providing low on-resistance combined with fast switching speeds. The PowerDI5060-8 package provides a compact surface-mount solution designed for efficient heat dissipation through the exposed drain pad.