DMT6006LK3-13

$0.29

Description：MOSFET BVDSS: 41V~60V TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:abaf859e3066 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2162 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 89.3W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMT6006LK3-13

Overview

The DMT6006LK3-13 is a 60V N-channel enhancement mode MOSFET in a TO252 (DPAK) package. It features a maximum on-resistance of 6.5mΩ at VGS=10V and 10mΩ at VGS=4.5V, supporting continuous drain currents of 88A at TC=+25°C and 71A at TC=+70°C. The device includes an integrated body diode with a forward voltage of 1.2V max at IS=1A. Electrical characteristics include a gate threshold voltage range of 1.2V to 2.5V and total gate charge of 34.9nC at VGS=10V. Thermal resistance from junction to case is 1.4°C/W.

Feature Summary

100% Unclamped Inductive Switching (UIS) tested in production for enhanced reliability
Low RDS(ON) design minimizes conduction power losses
Low Qg specification reduces switching energy losses
Lead-free finish compliant with RoHS directives

Applications

Power management functions
DC-DC converters
Backlighting circuits

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, specifically RoHS compliance and halogen/antimony-free 'Green' device definitions. Ensure the selected part matches the exact thermal and electrical ratings required for the target application environment.

Selection Notes

Select this component when high-efficiency power management requires low conduction losses combined with robust inductive switching capabilities. The TO252 package provides a balance between current handling capacity and board space constraints. Evaluate the thermal resistance parameters against the system's heat dissipation requirements to ensure operation within the specified temperature limits.

Part Context

This component belongs to the Diodes Incorporated DMT6006 series of N-channel enhancement mode MOSFETs. The series is engineered for applications demanding superior switching performance and minimized on-state resistance. The product utilizes silicon technology housed in a molded plastic case with matte tin annealed terminals over a copper leadframe.

Replacement Considerations

Consult official documentation for verified substitute part numbers. Cross-reference pinouts, thermal resistance values, and electrical ratings before implementation.

FAQ

Is the DMT6006LK3-13 suitable for automotive applications?

For automotive applications requiring AEC-Q100/101/200 qualification or IATF 16949 manufacturing, contact Diodes Incorporated directly as standard parts may not meet these specific change control requirements.